Details

---

BUY 24C16WP https://www.utsource.net/itm/p/12535311.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Operating Voltage	VCC	1.8	-	5.5	V	Supply voltage range
Standby Current	ISTBY	-	1	5	μA	Quiescent current when not in use
Active Current	ICC	-	1	3	mA	Current consumption during active operation
Write Cycle Time	tWC	-	5	-	ms	Maximum time required to complete a write cycle
Page Write Time	tPW	-	5	-	ms	Time required to write one page (16 bytes)
Read Cycle Time	tRC	-	0.25	-	ms	Maximum time required to complete a read cycle
Data Retention	-	-	100	-	years	Guaranteed data retention period
Operating Temperature	TA	-40	-	85	°C	Ambient temperature range for normal operation
Storage Temperature	TSTG	-55	-	125	°C	Temperature range for storage
Memory Size	-	-	2048	-	bytes	Total memory capacity (16K bits, organized as 256 pages of 8 bytes each)
Organization	-	-	256	-	pages	Memory is organized into 256 pages, each 8 bytes long
Package	-	-	-	-	SOIC-8	Standard 8-pin Small Outline Integrated Circuit package

Instructions for Using the 24C16WP EEPROM

1. Power Supply:

   • Connect the V_CC pin to a power supply within the range of 1.8V to 5.5V.
   • Ground the GND pin.

2. Addressing:

   • The 24C16WP has three address pins (A0, A1, A2) that can be tied to V_CC or GND to select one of eight possible addresses (0x50 to 0x57).

3. Data Communication:

   • Use the I₂C protocol for communication.
   • SDA (Serial Data) and SCL (Serial Clock) lines must be connected to pull-up resistors to V_CC.

4. Write Operation:

   • Start the I₂C transaction with a start condition.
   • Send the device address followed by the write bit (0).
   • Send the memory address where the data will be written.
   • Send the data byte(s) to be written.
   • End the transaction with a stop condition.
   • Wait for the write cycle time (5ms) before initiating another write operation.

5. Read Operation:

   • Start the I₂C transaction with a start condition.
   • Send the device address followed by the write bit (0).
   • Send the memory address from which data will be read.
   • Generate a repeated start condition.
   • Send the device address followed by the read bit (1).
   • Read the data byte(s) from the device.
   • Acknowledge or NACK the data as needed.
   • End the transaction with a stop condition.

6. Page Write:

   • To write more than one byte at a time, ensure that the data does not cross a page boundary (8 bytes).
   • If writing across a page boundary, split the write operation into two separate transactions.

7. Error Handling:

   • Monitor the ACK bit during read and write operations to ensure successful communication.
   • Implement error handling to manage any NACK conditions or other communication issues.

8. Data Retention:

   • Ensure that the device is powered down properly to avoid data corruption.
   • Store the device in a temperature range between -55°C and 125°C to maintain data integrity.

9. Storage and Handling:

   • Store the device in a dry, static-free environment to prevent damage.
   • Handle the device with care to avoid mechanical stress on the pins and package.

(For reference only)