Details

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BUY AM29F400BB-55SE0 https://www.utsource.net/itm/p/12535368.html

Parameter	Description	Value
Device Type	Flash Memory	4 Mbit (512K x 8)
Package	TSOP II (48-pin)	-
Operating Voltage (Vcc)	Supply Voltage	2.7V to 3.6V
Programming Voltage (Vpp)	Programming Voltage (Not required for this device)	Not Applicable
Data Retention	Data retention at 85°C	10 years
Write Cycle Time	Time required to complete a write cycle	1.5 ms
Page Size	Size of the page for programming	256 bytes
Sector Size	Size of the sector for erase operations	8 Kbytes
Block Size	Size of the block for erase operations	64 Kbytes
Chip Erase Time	Time required to erase the entire chip	40 ms
Sector Erase Time	Time required to erase a single sector	40 ms
Block Erase Time	Time required to erase a single block	40 ms
Operating Temperature	Temperature range for operation	-40°C to +85°C
Storage Temperature	Temperature range for storage	-65°C to +150°C
Access Time	Time required to access data	55 ns (max)
Standby Current	Current consumption in standby mode	1 μA (max)
Active Current	Current consumption during active operation	30 mA (max)
Write Current	Current consumption during write operation	15 mA (max)
Erase Current	Current consumption during erase operation	15 mA (max)

Instructions for Use:

1. Power Supply:

   • Connect Vcc to the supply voltage (2.7V to 3.6V).
   • Connect Vss to ground.

2. Address Lines (A0-A18):

   • Connect address lines to the appropriate address bus to select the desired memory location.

3. Data Lines (DQ0-DQ7):

   • Connect data lines to the data bus for read/write operations.

4. Control Signals:

   • CE# (Chip Enable): Active low. When low, the device is selected.
   • OE# (Output Enable): Active low. When low, the device outputs data.
   • WE# (Write Enable): Active low. When low, the device writes data.
   • WP# (Write Protect): Active low. When low, write protection is enabled.
   • RB# (Ready/Busy): Indicates the status of the device. Low when the device is busy.

5. Programming:

   • Use the standard JEDEC command set for programming and erasing.
   • Write operations must be performed in page mode (256 bytes).

6. Erasing:

   • Erase operations can be performed on sectors (8 Kbytes), blocks (64 Kbytes), or the entire chip.
   • Use the appropriate command sequence for the desired erase operation.

7. Read Operations:

   • Apply the address to the address lines and assert CE# and OE# to read data from the memory.

8. Write Protection:

   • To prevent accidental writes, assert WP# low.

9. Power Sequencing:

   • Ensure that Vcc is applied before any other signals to avoid damage to the device.

10. Handling Precautions:

    • Handle the device with care to avoid static discharge.
    • Follow proper ESD (Electrostatic Discharge) handling procedures.

For detailed command sequences and timing diagrams, refer to the device datasheet.

(For reference only)