Details
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Parameter | Description | Value |
---|---|---|
Device Type | High Density CMOS EPROM | AT28C64-20JI |
Memory Capacity | Total Memory Size | 64 K x 8 bits |
Organization | Memory Organization | 8,192 x 8 bits |
Supply Voltage (Vcc) | Operating Supply Voltage Range | 4.5 V to 5.5 V |
Programming Voltage | Programming Voltage (Vpp) | 12.0 V ± 0.5 V |
Access Time | Maximum Access Time (tAC) | 20 ns |
Write Cycle Time | Typical Write Cycle Time (tWC) | 3 ms |
Data Retention | Data Retention Time at 25°C | 10 years |
Operating Temperature | Operating Temperature Range | -40°C to +85°C |
Package Type | Package Type | 28-Pin Plastic J-Lead |
Pin Configuration | Number of Pins | 28 |
Standby Current | Standby Current (Icc) | 5 μA (max) |
Active Current | Active Current (Icc) | 20 mA (max) |
Instructions for Use
Power Supply:
- Connect Vcc to a stable 5V supply within the range of 4.5V to 5.5V.
- Connect Vpp to 12V ± 0.5V during programming.
Addressing:
- Apply the desired address to the address lines (A0-A12) to select the memory location.
Data Input/Output:
- For read operations, the data will be available on the data lines (D0-D7) after the access time (tAC).
- For write operations, apply the data to the data lines (D0-D7) before initiating the write cycle.
Control Signals:
- Chip Select (CS): Low to enable the device.
- Output Enable (OE): Low to enable data output.
- Write Enable (WE): Low to initiate a write cycle.
Programming:
- Ensure Vpp is applied to the appropriate pin during programming.
- Follow the timing specifications for write cycle time (tWC).
Handling:
- Handle the device with care to avoid static damage.
- Store in a dry environment to prevent moisture damage.
Testing:
- Verify the device functionality by reading and writing to various memory locations.
- Ensure all signals meet the specified voltage and timing requirements.
Storage:
- Store the device in a static-protective bag when not in use.
Disposal:
- Dispose of the device according to local regulations for electronic waste.
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