Details

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BUY NTB25P06G https://www.utsource.net/itm/p/12536035.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss	-	-	60	V	Drain-source breakdown voltage
Continuous Drain Current	Id	-	2.5	-	A	Continuous drain current at Tc = 25°C
Pulse Drain Current	Ipm	-	13	-	A	Pulse drain current (t = 10 μs)
Gate Threshold Voltage	Vgs(th)	1.0	2.0	4.0	V	Gate threshold voltage
On-State Resistance	Rds(on)	0.25	-	-	Ω	On-state resistance at Vgs = 10V
Input Capacitance	Ciss	-	1100	-	pF	Input capacitance
Output Capacitance	Coss	-	250	-	pF	Output capacitance
Total Device Dissipation	Ptot	-	-	2.0	W	Total device dissipation
Junction Temperature	Tj	-25	-	175	°C	Operating junction temperature range
Storage Temperature	Tstg	-55	-	150	°C	Operating storage temperature range

Instructions for Use:

1. Handling and Installation:

   • Handle the NTB25P06G with care to avoid damage to the leads or body.
   • Ensure proper heat sinking if operating near maximum power dissipation.

2. Biasing and Operation:

   • Apply gate voltages within the specified limits to prevent gate oxide damage.
   • Operate within the continuous drain current ratings to avoid overheating.

3. Mounting:

   • Mount on a suitable heatsink if necessary, especially for high-power applications.
   • Ensure good thermal contact between the device and heatsink.

4. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Avoid exposure to corrosive environments.

5. Testing:

   • Test the device under controlled conditions to ensure it meets application requirements.
   • Refer to datasheet for detailed testing procedures and specifications.

(For reference only)