VN750-E

VN750-E

Category: IC Chips

Specifications
Details

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Parameter Description Value
Part Number Full part identification VN750-E
Type Type of component N-Channel MOSFET
Package Package type TO-220
Vds (Max) Drain-to-Source Voltage 750 V
Id (Max) Continuous Drain Current 14 A
Pd (Max) Total Power Dissipation 160 W
Rds(on) (Max) On-State Resistance at Vgs=10V 0.18 Ω
Vgs(th) (Max) Gate Threshold Voltage 4 V
f(t) (Max) Transition Frequency 1.5 MHz
Qg (Total) Total Gate Charge 75 nC
Operating Temp. Operating Temperature Range -55°C to +150°C

Instructions for Use:

  1. Handling Precautions: The VN750-E is sensitive to electrostatic discharge (ESD). Handle with care using ESD-safe practices.
  2. Mounting: Ensure proper heat sinking when mounting the device to manage heat dissipation effectively.
  3. Biasing: Apply gate voltage carefully; exceeding the maximum gate-source voltage can damage the device.
  4. Storage: Store in a dry environment, away from moisture and corrosive substances.
  5. Testing: Before installation, verify the device parameters match your application requirements.
  6. Application: Suitable for high-voltage switching applications such as power supplies, motor control, and inverters.
(For reference only)

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