Details

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BUY IRF9530PBF-VB https://www.utsource.net/itm/p/12536068.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source Voltage	V(DS)	-	-	100	V	Maximum drain-to-source voltage
Gate-Source Voltage	V(GS)	-20	-	20	V	Maximum gate-to-source voltage
Continuous Drain Current	I(D)	-	9.4	-	A	Continuous drain current at Tc = 25°C
Pulse Drain Current	I(D)P	-	36	-	A	Pulse drain current (t=10μs, duty cycle=1%)
Power Dissipation	P(TOT)	-	-	48	W	Total power dissipation (Tc = 25°C)
Junction Temperature	T(J)	-	-	175	°C	Maximum junction temperature
Storage Temperature	T(STG)	-65	-	150	°C	Operating storage temperature range

Instructions for Use:

1. Handling Precautions: The IRF9530PBF-VB is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection measures.
2. Mounting: Ensure proper thermal management when mounting the device. Consider using heat sinks or heatsink compound if operating near maximum power dissipation limits.
3. Biasing: Carefully set the gate-source voltage within the specified limits to avoid damaging the device. Exceeding these limits can lead to permanent damage.
4. Current Limitation: Do not exceed the continuous or pulse drain current ratings. For applications requiring higher currents, consider parallel operation of multiple devices.
5. Temperature Monitoring: Monitor the junction temperature to ensure it does not exceed the maximum allowable limit. High temperatures can significantly reduce the lifespan of the device.
6. Storage Conditions: Store the device in a dry environment within the specified storage temperature range to prevent damage from moisture or extreme temperatures.

(For reference only)