Details

---

BUY HFD4/3-S https://www.utsource.net/itm/p/12536156.html

Parameter	Value	Description
Part Number	HFD4/3-S	High-frequency diode
Maximum Reverse Voltage (V_R)	400 V	Maximum voltage the diode can withstand in reverse direction
Maximum Forward Current (I_F)	3 A	Maximum current allowed through the diode in forward direction
Peak Reverse Current (I_RM)	50 mA	Peak repetitive reverse current
Junction Temperature (T_j)	-55 to 175°C	Operating temperature range of the junction
Storage Temperature (T_stg)	-65 to 150°C	Temperature range for storage
Forward Voltage Drop (V_F) at I_F=1A	1.1 V	Voltage drop across the diode when conducting forward current
Reverse Recovery Time (t_rr)	20 ns	Time it takes for the diode to recover from forward to reverse blocking state

Instructions:

1. Installation:

   • Ensure the operating environment does not exceed the specified junction and storage temperature ranges.
   • Use appropriate heat sinks if continuous operation near maximum temperatures is expected.

2. Handling:

   • Handle with care to avoid mechanical damage.
   • Follow anti-static precautions to prevent damage from electrostatic discharge.

3. Operation:

   • Do not exceed the maximum reverse voltage or forward current ratings to prevent device failure.
   • Monitor the forward voltage drop to ensure the diode is operating within its specified parameters.

4. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Keep components away from direct sunlight and corrosive materials.

5. Testing:

   • Test the diode using a suitable tester that does not exceed the maximum ratings.
   • Verify reverse recovery time under application-specific conditions to ensure compatibility.

(For reference only)