Details

---

BUY D44VH10G https://www.utsource.net/itm/p/12536163.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCEO	-	100	-	V
Emitter-Collector Voltage	VEBO	-	5	-	V
Collector Current	IC	-	1.5	-	A
Power Dissipation	PTOT	-	62.5	-	W
Junction Temperature	TJ	-40	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage power dissipation, especially when operating at high currents.
   • Use a suitable thermal compound between the transistor and the heat sink to improve thermal conductivity.

2. Biasing:

   • Ensure that the base current (I_B) is sufficient to fully saturate the transistor when used as a switch.
   • For linear applications, bias the transistor to operate in the active region to avoid excessive power dissipation.

3. Overvoltage Protection:

   • Consider using a Zener diode across the collector and emitter to protect against transient overvoltages.

4. Current Limiting:

   • Use a series resistor in the base circuit to limit the base current and prevent damage to the transistor.

5. Storage:

   • Store the transistor in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads.

6. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to avoid permanent damage to the transistor.
   • Monitor the junction temperature during operation to ensure it remains within safe limits.

(For reference only)