Details

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BUY MJ15003 https://www.utsource.net/itm/p/12536514.html

Parameter	Description	Value
Device Type	High Power NPN Transistor
Collector-Emitter Voltage (Vce)	Maximum voltage between collector and emitter	60V
Emitter-Base Voltage (Veb)	Maximum voltage between emitter and base	7V
Collector Current (Ic)	Continuous collector current	15A
Power Dissipation (Ptot)	Total power dissipation	125W
Junction Temperature (Tj)	Operating junction temperature range	-55°C to 150°C
Storage Temperature (Tstg)	Storage temperature range	-65°C to 150°C
Case Style	Case type	TO-247

Instructions for Use:

1. Mounting: Ensure proper heat sinking to manage the high power dissipation.
2. Biasing: Operate within specified Vce, Veb, and Ic limits to avoid damage.
3. Thermal Management: Monitor junction temperature to prevent overheating.
4. Handling: Use appropriate ESD precautions when handling the device.
5. Soldering: Follow recommended soldering profiles to avoid thermal stress.

(For reference only)