Details

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BUY KJ042 https://www.utsource.net/itm/p/12536587.html

Parameter	Description	Value
Part Number	Component Identifier	KJ042
Type	Device Type	MOSFET
Polarity	Polarity	N-Channel
VDS	Drain-Source Voltage (Max)	60V
VGS	Gate-Source Voltage (Max)	卤20V
ID	Continuous Drain Current (Tc=25掳C)	10A
RDS(on)	On-State Resistance (VGS=10V)	4.5m惟
PTOT	Total Power Dissipation (Ta=25掳C)	60W
fSW	Switching Frequency	500kHz
QG	Gate Charge	50nC
QOSS	Output Capacitance (VDS=30V)	150pF
Package	Housing Type	TO-220
Operating Temp.	Operating Temperature Range	-55掳C to +150掳C
Storage Temp.	Storage Temperature Range	-65掳C to +150掳C

Instructions for Use:

1. Handling:

   • Handle with care to avoid static damage.
   • Use proper ESD protection when handling the device.

2. Mounting:

   • Ensure the device is securely mounted to a heatsink if operating at high power levels.
   • Use thermal paste to improve heat transfer between the device and heatsink.

3. Biasing:

   • Apply the gate voltage (V_GS) within the specified range to avoid damaging the device.
   • Ensure the gate-source voltage does not exceed 卤20V.

4. Operation:

   • Operate within the specified drain-source voltage (V_DS) and continuous drain current (I_D) limits.
   • Monitor the temperature to ensure it remains within the operating temperature range.

5. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Avoid exposure to extreme temperatures or humidity.

6. Testing:

   • Use a suitable test setup to verify the device parameters before integrating into a circuit.
   • Refer to the datasheet for detailed testing procedures and recommended test conditions.

(For reference only)