Details

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BUY IRG4PSC71UD https://www.utsource.net/itm/p/12540158.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Input Voltage	V_IN			650	V
Continuous Drain Current	I_D		32		A	T_C = 25°C
Power Dissipation	P_TOT			140	W	T_C = 25°C
Junction Temperature	T_J			175	°C
Gate Charge	Q_G		75		nC
Total Gate Charge	Q_GT		98		nC
Turn-on Delay Time	t_d(on)		42		ns	V_DS = 400V, I_D = 10A, R_G = 2Ω
Rise Time	t_r		26		ns	V_DS = 400V, I_D = 10A, R_G = 2Ω
Turn-off Delay Time	t_d(off)		32		ns	V_DS = 400V, I_D = 10A, R_G = 2Ω
Fall Time	t_f		28		ns	V_DS = 400V, I_D = 10A, R_G = 2Ω

Instructions for IRG4PSC71UD:

1. Installation:

   • Ensure that the device is installed in a well-ventilated area to prevent overheating.
   • Use appropriate heatsinks or cooling methods if operating near maximum power dissipation.

2. Operating Voltage:

   • Do not exceed the maximum input voltage of 650V to avoid damage to the device.

3. Current Handling:

   • The continuous drain current should not exceed 32A at a case temperature of 25°C. Adjust for higher temperatures as necessary.

4. Temperature Management:

   • Keep the junction temperature below 175°C to ensure reliable operation and longevity of the device.

5. Gate Drive:

   • Be mindful of the gate charge parameters when designing the drive circuitry. Ensure that the gate resistor (R_G) is chosen to provide sufficient drive without excessive switching losses.

6. Switching Characteristics:

   • For optimal performance, consider the turn-on delay time, rise time, turn-off delay time, and fall time under specified conditions. These values can help in optimizing the switching frequency and minimizing losses.

7. Storage and Handling:

   • Store in a dry, cool place away from direct sunlight and corrosive substances.
   • Handle with care to avoid electrostatic discharge (ESD) damage; use ESD protection equipment where necessary.

(For reference only)