Details

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BUY 2N3819 https://www.utsource.net/itm/p/12541434.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Breakdown Voltage	BVDSS	-	200	-	V
Gate-Source Breakdown Voltage	BVGS	-	30	-	V
Drain Current (Continuous)	ID	-	5	-	mA
Drain Current (Pulsed)	IDM	-	100	-	mA
Gate Threshold Voltage	VGS(th)	0.4	1.5	3.0	V
Transconductance	gm	2.0	4.0	6.0	mS
Input Capacitance	Ciss	-	10	-	pF
Output Capacitance	Coiss	-	2.5	-	pF
Reverse Transfer Capacitance	Crss	-	0.3	-	pF
Power Dissipation	PD	-	250	-	mW
Operating Temperature Range	Toper	-40	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Handle the 2N3819 with care to avoid static damage.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Biasing:

   • Ensure the gate-source voltage (VGS) is within the specified range to prevent damage.
   • The gate should be biased to control the drain current (ID).

3. Heat Dissipation:

   • Ensure adequate heat dissipation if operating near the maximum power dissipation (PD).
   • Consider using a heatsink if necessary.

4. Operating Conditions:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Avoid exceeding the maximum ratings for drain-source voltage (BVDSS), gate-source voltage (BVGS), and drain current (ID).

5. Mounting:

   • Mount the device securely to prevent mechanical stress.
   • Follow recommended soldering profiles to avoid thermal shock.

6. Testing:

   • Use appropriate test equipment and methods to verify the device parameters.
   • Ensure the test conditions (voltage, current, temperature) are within the specified limits.

7. Storage:

   • Store the 2N3819 in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use.

(For reference only)