Details

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BUY FGH60N60SFDTU https://www.utsource.net/itm/p/12541437.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	600	-	V	-
Gate-Source Voltage	VGS	-20	-	20	V	-
Continuous Drain Current	ID	-	60	-	A	TC = 25°C
Continuous Drain Current	ID	-	40	-	A	TC = 100°C
Pulse Drain Current	ID(p)	-	120	-	A	tp = 10 μs, IG = 10 A
Total Power Dissipation	PTOT	-	375	-	W	TC = 25°C
Junction Temperature	TJ	-	-	150	°C	-
Storage Temperature Range	TSTG	-55	-	150	°C	-
Thermal Resistance, Junction to Case	RthJC	-	0.65	-	K/W	-
Gate Charge	QG	-	130	-	nC	VGS = 15 V, ID = 40 A
Input Capacitance	Ciss	-	4800	-	pF	VDS = 400 V, VGS = 0 V
Output Capacitance	Coss	-	280	-	pF	VDS = 400 V, VGS = 0 V
Reverse Transfer Capacitance	Crss	-	900	-	pF	VDS = 400 V, VGS = 0 V
Turn-on Delay Time	td(on)	-	60	-	ns	VGS = 15 V, ID = 40 A
Rise Time	tr	-	50	-	ns	VGS = 15 V, ID = 40 A
Turn-off Delay Time	td(off)	-	70	-	ns	VGS = -15 V, ID = 40 A
Fall Time	tf	-	50	-	ns	VGS = -15 V, ID = 40 A

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the thermal resistance and keep the junction temperature within the specified range.
   • Handle the device with care to avoid damage to the leads and the die.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Ensure that the gate-source voltage (V_GS) does not exceed the maximum ratings to prevent damage to the device.

3. Operating Conditions:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the continuous drain current (I_D) and total power dissipation (P_TOT) to avoid overheating.

4. Pulse Operation:

   • For pulse operation, ensure that the pulse duration (t_p) and peak current (I_D(p)) do not exceed the specified limits.

5. Gate Drive:

   • Use appropriate gate drive circuits to ensure fast and clean switching transitions.
   • Avoid excessive gate charge (Q_G) to minimize switching losses.

6. Capacitance Considerations:

   • Account for the input capacitance (C_iss), output capacitance (C_oss), and reverse transfer capacitance (C_rss) in your circuit design to optimize performance.

7. Storage and Transportation:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and transportation.

8. Testing and Troubleshooting:

   • Use appropriate test equipment and procedures to verify the device parameters and performance.
   • Refer to the datasheet for detailed testing procedures and troubleshooting tips.

(For reference only)