Details

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BUY 50T65FESC https://www.utsource.net/itm/p/12541466.html

Below is the parameter table and instructions for the 50T65FESC MOSFET.

50T65FESC Parameter Table

Parameter	Symbol	Min	Typical	Max	Unit
Drain-Source Voltage	VDS	-	-	650	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	-	50	A
Pulse Drain Current (tp = 10 μs)	ID(pulse)	-	-	150	A
Total Power Dissipation	PTOT	-	-	230	W
Junction Temperature	TJ	-55	-	175	°C
Storage Temperature	TSTG	-55	-	150	°C
Thermal Resistance (Junction to Case)	RθJC	-	-	0.4	°C/W
On-State Resistance	RDS(on)	-	0.055	0.075	Ω
Input Capacitance	Ciss	-	1800	-	pF
Output Capacitance	Coss	-	300	-	pF
Gate Charge	QG	-	95	-	nC
Turn-On Delay Time	td(on)	-	35	-	ns
Rise Time	tr	-	45	-	ns
Turn-Off Delay Time	td(off)	-	25	-	ns
Fall Time	tf	-	35	-	ns

Instructions for Use

1. Handling Precautions:

   • Handle the 50T65FESC with care to avoid damage to the terminals and the silicon die.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

2. Mounting:

   • Ensure that the mounting surface is clean and flat to achieve good thermal contact.
   • Apply a thin layer of thermal compound between the device and the heat sink to improve thermal conductivity.
   • Tighten the mounting screws to the recommended torque to ensure good mechanical and thermal contact.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits (-15V to +20V).
   • Ensure that the gate-source voltage is stable and free from excessive noise to prevent false triggering.

4. Current Limitation:

   • Do not exceed the continuous drain current (I_D) of 50A or the pulse drain current (I_D(pulse)) of 150A for 10 μs pulses.
   • Use appropriate current limiting techniques if the load current may exceed these limits.

5. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175°C.
   • Use a suitable heat sink and cooling method (e.g., forced air cooling) to maintain the device within its operating temperature range.

6. Storage:

   • Store the 50T65FESC in a dry, cool place away from direct sunlight and sources of heat.
   • Avoid exposure to corrosive gases and environments with high humidity.

7. Testing:

   • Before installation, perform a visual inspection to ensure there are no physical damages.
   • Test the device using a suitable test setup to verify its electrical parameters and functionality.

By following these instructions, you can ensure the reliable operation and long-term performance of the 50T65FESC MOSFET.

(For reference only)