Details

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BUY A3P060-VQG100 https://www.utsource.net/itm/p/12541471.html

Parameter	Description
Part Number	A3P060-VQG100
Type	MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Package Type	VQG100
VDS (Drain-Source Voltage)	600 V (Maximum Drain-to-Source Voltage)
RDS(on) (On-State Resistance)	2.7 mΩ (Typical at 25°C, VGS = 10V)
ID (Continuous Drain Current)	40 A (at 25°C), 28 A (at 85°C)
Power Dissipation	200 W (at Tc = 25°C)
Operating Temperature Range	-55°C to +175°C
Gate Charge (Qg)	149 nC (Typical at VDS = 600V, ID = 20A)
Input Capacitance (Ciss)	4040 pF (at VDS = 600V, f = 1 MHz)
Output Capacitance (Coss)	250 pF (at VDS = 600V, f = 1 MHz)
Reverse Transfer Capacitance (Crss)	650 pF (at VDS = 600V, f = 1 MHz)

Instructions:

1. Handling and Storage: Store in a dry environment. Handle with care to avoid damage to the leads and package.
2. Mounting: Ensure proper heat sinking for continuous operation at high currents. Follow manufacturer guidelines for mounting torque and thermal interface materials.
3. Electrical Connections: Verify correct polarity before applying power. Ensure all connections are secure and free from corrosion.
4. Testing: Use appropriate test equipment to verify parameters such as RDS(on) and VDS. Do not exceed maximum ratings during testing or operation.
5. Safety Precautions: Always disconnect power and discharge capacitors before servicing. Wear protective equipment when handling high voltage circuits.
6. Environmental Considerations: Dispose of components according to local regulations. Some components may contain substances regulated by environmental laws.

(For reference only)