AO4466

AO4466

Category: Transistors

Specifications
Details

BUY AO4466 https://www.utsource.net/itm/p/12541492.html

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source On-State Resistance RDS(on) VGS = 4.5V, ID = 10A - 8.0 -
Gate Charge Qg VDS = 12V, ID = 10A - 19 - nC
Input Capacitance Ciss VDS = 12V - 1350 - pF
Output Capacitance Coss VDS = 12V - 160 - pF
Threshold Voltage Vth ID = 1mA 1.0 1.5 2.0 V
Continuous Drain Current ID Tc = 25°C - 25 - A
Pulse Drain Current IDpeak tp = 10ms, Tc = 25°C - 75 - A
Power Dissipation PD Tc = 25°C - 2.1 - W
Junction Temperature TJ - -55 - 150 °C

Instructions for Use:

  1. Handling Precautions: The AO4466 is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
  2. Thermal Management: Ensure adequate heat sinking or cooling if operating near maximum current or power ratings to prevent overheating.
  3. Gate Drive Requirements: For optimal performance, ensure the gate voltage is within specified limits. Typically, a VGS of 4.5V is recommended for minimum RDS(on).
  4. Storage Conditions: Store in a dry environment away from direct sunlight and excessive humidity.
  5. Mounting Orientation: Mount the device with proper orientation to ensure correct electrical connections and thermal dissipation.
  6. Testing: Before integrating into a circuit, test the device parameters under specified conditions to confirm functionality.
(For reference only)

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