Details

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BUY 2N5060 https://www.utsource.net/itm/p/12541509.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	-	-	40	V
Emitter-Base Voltage	V(BR)EBO	-	-	5	V
Collector-Base Voltage	V(BR)CBO	-	-	70	V
Collector Current	IC	-	-	150	mA
Continuous Total Dissipation	PD	-	-	625	mW
Junction Temperature	Tj	-	-	150	°C
Storage Temperature	Tstg	-65	-	150	°C

Instructions for Using the 2N5060:

1. Mounting:

   • Ensure that the component is mounted in a way that it can dissipate heat effectively, especially if operating near its maximum power dissipation.

2. Biasing:

   • Apply appropriate biasing to avoid exceeding the maximum ratings of the device. The base current should be controlled to prevent excessive collector current.

3. Operating Conditions:

   • Operate within the specified temperature range to ensure reliable performance and longevity.
   • Avoid subjecting the transistor to voltages or currents beyond its rated limits as this can cause permanent damage.

4. Storage:

   • Store in a dry environment within the storage temperature range to prevent degradation.

5. Handling:

   • Handle with care to avoid mechanical damage and electrostatic discharge (ESD). Use proper ESD precautions when handling sensitive components.

6. Testing:

   • When testing the device, use low voltage and current levels initially to verify connections and operation before applying higher values.

(For reference only)