Details

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BUY IRFB428 https://www.utsource.net/itm/p/12541513.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 12A	-	16	-	mΩ
Gate-Source Threshold Voltage	VGS(th)	ID = 250μA	2.0	-	4.0	V
Continuous Drain Current	ID	TC = 25°C	-	37	-	A
Pulse Drain Current	IDM	tp = 10ms, Duty Cycle = 1%	-	180	-	A
Power Dissipation	PD	TC = 25°C	-	160	-	W
Junction Temperature	TJ	-	-	-	175	°C
Storage Temperature Range	TSTG	-	-55	-	150	°C

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to maintain the junction temperature within specified limits.
   • Handle with care to avoid damage to the gate oxide layer.

2. Biasing:

   • Apply gate-source voltage (VGS) carefully; exceeding the maximum rating can cause permanent damage.
   • Ensure that the gate drive circuitry provides sufficient current to charge and discharge the gate capacitance quickly, improving switching performance.

3. Thermal Management:

   • Monitor the operating temperature to ensure it does not exceed the maximum junction temperature of 175°C.
   • Use appropriate thermal management techniques such as heatsinks or forced air cooling if necessary.

4. Overcurrent Protection:

   • Implement overcurrent protection circuits to prevent damage from excessive drain currents.

5. Storage and Operation:

   • Store in a dry environment within the storage temperature range of -55°C to 150°C.
   • Operate within specified electrical and thermal limits to ensure reliable performance.

6. Pulse Operation:

   • For pulse applications, verify that the duty cycle and pulse width are within the safe operating area to avoid overheating.

(For reference only)