WGP18N50SE

WGP18N50SE

Category: Transistors

Specifications
Details

BUY WGP18N50SE https://www.utsource.net/itm/p/12541629.html

Parameter Symbol Min Typ Max Unit Description
Blocking Voltage V(BR)DSS - 500 - V Drain-source breakdown voltage
Continuous Drain Current ID - 18 - A Continuous drain current at Tc = 25°C
Pulse Drain Current Ipp - 90 - A Pulse drain current
Gate Threshold Voltage VGS(th) 2.0 4.0 6.0 V Gate threshold voltage
On-State Resistance RDS(on) - 0.055 - Ω On-state resistance at VGS = 10V, ID = 18A
Total Gate Charge Qg - 135 - nC Total gate charge
Input Capacitance Ciss - 2750 - pF Input capacitance
Output Capacitance Coss - 750 - pF Output capacitance
Reverse Transfer Capacitance Crss - 210 - pF Reverse transfer capacitance

Instructions for WGP18N50SE:

  1. Installation and Handling:

    • Handle the device with care to avoid damage to the leads or body.
    • Ensure that the device is installed in a clean environment free from contaminants.
  2. Mounting:

    • Mount the device on a suitable heat sink if necessary to ensure proper heat dissipation.
    • Use thermal paste between the device and the heat sink for better thermal conductivity.
  3. Electrical Connections:

    • Connect the source (S), drain (D), and gate (G) terminals correctly as per the circuit design.
    • Ensure that the gate drive voltage does not exceed the maximum specified gate-source voltage (VGS).
  4. Operating Conditions:

    • Operate the device within the specified temperature range (-55°C to +150°C).
    • Ensure that the continuous drain current does not exceed 18A and pulse drain current does not exceed 90A.
  5. Storage:

    • Store the device in a dry place away from direct sunlight and high humidity.
    • Keep the device in its original packaging until ready for use to prevent static damage.
  6. Safety Precautions:

    • Always wear appropriate protective equipment when handling the device.
    • Avoid short circuits between the terminals during installation and operation.
(For reference only)

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