Details

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BUY IRFB18N50KPBF https://www.utsource.net/itm/p/12541644.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	500	-	V
Gate-Source Voltage	VGSS	-20	-	20	V
Continuous Drain Current	ID	-	18	-	A	TC = 25°C
Pulse Drain Current	IDM	-	36	-	A	TC = 25°C, tp = 10 μs, Duty Cycle = 1%
Total Power Dissipation	PTOT	-	180	-	W	TC = 25°C
Junction Temperature	TJ	-	-	175	°C
Storage Temperature Range	TSTG	-65	-	150	°C
Thermal Resistance, Junction to Case	RθJC	-	0.48	-	°C/W
Gate Charge	QG	-	110	-	nC	VGS = 15V, ID = 18A
Input Capacitance	Ciss	-	1900	-	pF	VDS = 25V, f = 1 MHz
Output Capacitance	Coss	-	54	-	pF	VDS = 25V, f = 1 MHz
Turn-On Delay Time	td(on)	-	48	-	ns	VGS = 15V, ID = 18A
Rise Time	tr	-	58	-	ns	VGS = 15V, ID = 18A
Turn-Off Delay Time	td(off)	-	19	-	ns	VGS = 15V, ID = 18A
Fall Time	tf	-	38	-	ns	VGS = 15V, ID = 18A

Instructions for Use:

1. Thermal Management:

   • Ensure adequate heat sinking to manage the junction temperature (T_J) within the specified range.
   • The thermal resistance (R_θJC) should be considered when designing the cooling system.

2. Voltage Handling:

   • Do not exceed the maximum drain-source voltage (V_DSS) of 500V.
   • The gate-source voltage (V_GSS) should be kept between -20V and 20V to avoid damage.

3. Current Handling:

   • The continuous drain current (I_D) should not exceed 18A at a case temperature (T_C) of 25°C.
   • For pulse applications, the peak drain current (I_DM) can reach up to 36A under specific conditions (t_p = 10 μs, Duty Cycle = 1%).

4. Power Dissipation:

   • The total power dissipation (P_TOT) should not exceed 180W at a case temperature (T_C) of 25°C.

5. Gate Drive:

   • Proper gate drive is crucial for efficient operation. Use the typical gate charge (Q_G) value to design the gate driver circuit.
   • Ensure the gate voltage transitions are fast to minimize switching losses.

6. Capacitance Considerations:

   • The input capacitance (C_iss) and output capacitance (C_oss) affect the switching performance and should be accounted for in the circuit design.

7. Switching Times:

   • The turn-on delay time (t_d(on)), rise time (t_r), turn-off delay time (t_d(off)), and fall time (t_f) are important parameters for high-frequency applications. Optimize these times to reduce switching losses and improve efficiency.

8. Storage and Handling:

   • Store the device within the storage temperature range (T_STG) of -65°C to 150°C.
   • Handle the device with care to avoid static discharge, which can damage the gate oxide.

By following these guidelines, you can ensure reliable and efficient operation of the IRFB18N50KPBF MOSFET.

(For reference only)