Details

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BUY 2SC536F-SPA https://www.utsource.net/itm/p/12541785.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCEO	-	-	400	V
Emitter-Collector Voltage	VEBO	-	-	5	V
Base-Emitter Voltage	VBE	-	1.2	1.8	V	@ IC = 150mA, IB = 15mA
Collector Current	IC	-	-	150	mA
Base Current	IB	-	-	15	mA
Power Dissipation	PT	-	-	625	mW	@ TA = 25°C
Operating Temperature	TOP	-55	-	150	°C
Storage Temperature	TS	-65	-	150	°C
Thermal Resistance	RθJC	-	200	-	K/W	Junction to Case
Transition Frequency	fT	-	300	-	MHz	@ IC = 10mA, VCE = 10V

Instructions for Use:

1. Handling Precautions:

   • Handle the 2SC536F-SPA with care to avoid damage to the leads and the semiconductor junction.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device to prevent damage from static electricity.

2. Mounting:

   • Ensure that the leads are not bent excessively close to the body of the transistor to avoid mechanical stress.
   • Soldering should be done quickly to minimize heat exposure. The maximum soldering temperature is 300°C for 10 seconds.

3. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table, as this can lead to permanent damage to the device.
   • Ensure adequate heat dissipation if the device is operating near its maximum power dissipation limits.

4. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Avoid exposing the device to extreme temperatures or humidity.

5. Testing:

   • When testing the device, use a multimeter or a transistor tester to verify the parameters such as V_BE, I_C, and V_CEO.
   • Ensure that the test conditions match the typical operating conditions specified in the datasheet.

6. Applications:

   • The 2SC536F-SPA is suitable for general-purpose amplification and switching applications in consumer electronics, automotive, and industrial equipment.

By following these instructions, you can ensure optimal performance and longevity of the 2SC536F-SPA transistor.

(For reference only)