Details

---

BUY MJ11032 https://www.utsource.net/itm/p/12541786.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC = 0, IE = 0	-	-	80	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IC = 0, IE = 0	-	-	7	V
Collector-Base Breakdown Voltage	V(BR)CBO	IE = 0	-	-	75	V
Continuous Collector Current	IC	Tc = 25°C	-	-	15	A
Power Dissipation	PD	Tc = 25°C	-	-	115	W
Junction Temperature	TJ	-	-	-	150	°C
Storage Temperature Range	TSTG	-	-55	-	150	°C

Instructions for MJ11032:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified storage temperature range.
   • Use appropriate anti-static precautions to prevent damage from electrostatic discharge (ESD).

2. Mounting and Soldering:

   • Ensure that the junction temperature does not exceed 150°C during soldering operations.
   • Follow manufacturer guidelines for mounting hardware and thermal management to ensure proper heat dissipation.

3. Operational Guidelines:

   • Do not exceed the maximum ratings provided in the parameter table to avoid damaging the device.
   • Keep continuous collector current within the specified limits to prevent overheating.

4. Testing:

   • When testing the device, ensure all test conditions match those specified in the parameter table for accurate results.
   • Use protective equipment and follow safety protocols when handling high voltages or currents.

5. Storage:

   • Store the device in a dry, cool place within the recommended storage temperature range.
   • Protect the device from physical damage during storage and transportation.

(For reference only)