Details

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BUY 2SK4108 https://www.utsource.net/itm/p/12541855.html

Parameter	Symbol	Min	Typical	Max	Unit
Drain-to-Source Voltage	VDS	-	-	300	V
Gate-to-Source Voltage	VGS	-15	-	15	V
Drain Current	ID	-	5	10	A
Gate Threshold Voltage	Vth	2	3.5	5	V
Transconductance	gm	-	2.5	5	S
Input Capacitance	Ciss	-	1600	-	pF
Output Capacitance	Coss	-	270	-	pF
Reverse Transfer Capacitance	Crss	-	120	-	pF
Power Dissipation	PD	-	-	100	W
Junction Temperature	Tj	-	-	175	°C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the maximum junction temperature (Tj) of 175°C.
   • Use appropriate mounting hardware to secure the device and ensure good thermal contact.

2. Biasing:

   • Apply the gate-to-source voltage (VGS) within the range of -15V to +15V.
   • The drain current (ID) should not exceed 10A to avoid damage.

3. Operation:

   • Operate the device within the specified drain-to-source voltage (VDS) range of up to 300V.
   • Monitor the power dissipation (PD) to ensure it does not exceed 100W.

4. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress or damage to the leads.

5. Testing:

   • Use a suitable testing setup to measure parameters such as transconductance (gm), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).
   • Ensure that all test conditions are within the specified limits to avoid inaccurate readings or damage to the device.

(For reference only)