Details

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BUY 2SC5198 https://www.utsource.net/itm/p/12541878.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	VCE	-	-	100	V
Emitter-Base Voltage	VEB	-	-	6	V
Collector Current	IC	-	-	15	A
Base Current	IB	-	-	3	A
Power Dissipation	PT	-	-	150	W	TA = 25°C
Storage Temperature	TSTG	-55	-	150	°C
Operating Temperature	TA	-55	-	150	°C
Transition Frequency	fT	-	100	-	MHz	IC = 150mA, VCE = 10V
DC Current Gain	hFE	20	70	200	-	IC = 150mA, VCE = 10V

Instructions for Use:

1. Mounting:

   • Ensure that the transistor is mounted on a heatsink to dissipate heat effectively, especially when operating at high power levels.
   • Use thermal grease between the transistor and the heatsink to improve thermal conductivity.

2. Biasing:

   • The base-emitter voltage (V_BE) is typically around 0.7V for silicon transistors.
   • Use appropriate biasing circuits to ensure stable operation and avoid thermal runaway.

3. Protection:

   • Include a base resistor to limit base current and prevent damage.
   • Consider using a fast-acting fuse in series with the collector to protect against short circuits.

4. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table to avoid damage to the transistor.
   • Monitor the junction temperature (T_J) to ensure it stays within safe limits.

5. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
   • Handle the transistor by the case or leads to avoid static discharge, which can damage the device.

6. Testing:

   • Use a multimeter to check the continuity and resistance between the leads before installation.
   • Test the transistor in a controlled environment to ensure it meets the specified parameters.

7. Soldering:

   • Use a low-wattage soldering iron and avoid prolonged heating of the leads during soldering.
   • Allow the transistor to cool down before handling to prevent thermal shock.

(For reference only)