Details

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BUY W25Q32JVSSIQ https://www.utsource.net/itm/p/12542337.html

Parameter	Description	Value
Device Type	High-Performance Serial Flash Memory	W25Q32JVSSIQ
Memory Density	Total Memory Size	32 Mbit (4 MB)
Organization	Number of Sectors, Pages, and Bytes	64 Sectors, 256 Pages, 256 Bytes per Page
Voltage Range (Vcc)	Operating Voltage Range	2.7 V to 3.6 V
Interface	Communication Protocol	SPI (Serial Peripheral Interface)
Clock Frequency	Maximum Clock Frequency	104 MHz
Data Rate	Maximum Data Transfer Rate	80 MHz (Quad I/O)
Operating Temperature	Temperature Range	-40°C to +85°C
Package Type	Package Form Factor	SOIC-8, TSSOP-8, WSON-8
Write Protection	Write Protect Pin	WP# Pin
Hold Function	Hold/Suspend Operation	HOLD# Pin
Endurance	Program/Erase Cycles	100,000 cycles
Retention	Data Retention	20 years at 25°C
Standby Current	Current Consumption in Standby Mode	1 μA (max)
Active Current	Current Consumption in Active Mode	10 mA (max)

Instructions for Use

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 2.7 V to 3.6 V.
   • Connect the Vcc pin to the power supply and GND pin to ground.

2. Communication:

   • Use the SPI interface for communication with the device.
   • Connect the following pins:
     • CS# (Chip Select): Low to enable communication.
     • SCK (Serial Clock): Provides the clock signal.
     • MOSI (Master Out Slave In): Data from the master to the slave.
     • MISO (Master In Slave Out): Data from the slave to the master.
     • WP# (Write Protect): Set high to allow writing, low to protect against accidental writes.
     • HOLD# (Hold/Suspend): Set high for normal operation, low to suspend ongoing operations.

3. Initialization:

   • Before any read or write operations, ensure the device is properly initialized by setting CS# low and sending the appropriate command sequence.

4. Read Operations:

   • Use the Read Data (03h) command to read data from the memory.
   • Specify the starting address and the number of bytes to read.

5. Write Operations:

   • Use the Write Enable (06h) command to enable writing.
   • Use the Page Program (02h) command to write data to the memory.
   • Specify the starting address and the data to be written.
   • Ensure the device is not busy before initiating a new write operation.

6. Erase Operations:

   • Use the Sector Erase (20h), Block Erase (52h/60h), or Chip Erase (C7h) commands to erase the memory.
   • Ensure the device is not busy before initiating an erase operation.

7. Status Register:

   • Use the Read Status Register (05h) command to check the status of the device.
   • The status register indicates whether the device is busy, write protected, or if any errors have occurred.

8. Power Management:

   • To reduce power consumption, use the Deep Power-Down (B9h) command to put the device into a low-power mode.
   • Use the Release from Deep Power-Down (ABh) command to resume normal operation.

9. Error Handling:

   • Monitor the status register for any error flags.
   • Handle errors appropriately, such as retrying the operation or resetting the device.

10. Handling:

    • Handle the device with care to avoid static damage.
    • Store the device in a dry, cool place when not in use.

For detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)