Details

---

BUY CY7C1061G-10BVXI https://www.utsource.net/itm/p/12542356.html

Parameter	Description	Value
Device Type	High-Speed CMOS Static RAM	64K x 1 (65,536 x 1)
Package	Plastic Small Outline Package (SOIC)	20-Pin
Supply Voltage (VCC)	Operating Voltage	2.7V to 3.6V
Access Time (tAA)	Access Time at VCC = 3.6V	10 ns
Cycle Time (tCYC)	Cycle Time	10 ns
Data Retention	Data Retention Time	10 years
Operating Temperature	Industrial Temperature Range	-40°C to +85°C
Standby Current (ISB)	Supply Current in Standby Mode	1 μA
Active Current (IAV)	Supply Current in Active Mode	25 mA
Power-down Mode	Power-down Feature Available	Yes
Output Drive Capability	Output Drive Capability	24 mA

Instructions for Use:

1. Power Supply: Ensure the supply voltage is within the specified range of 2.7V to 3.6V.
2. Timing Requirements: Adhere to the access time and cycle time specifications to avoid data corruption or loss.
3. Temperature Considerations: Operate the device within the industrial temperature range (-40°C to +85°C) to ensure reliable performance.
4. Power Management: Utilize the power-down mode to reduce power consumption when the device is not in use.
5. Handling Precautions: Handle with care to prevent damage from electrostatic discharge (ESD). Use appropriate ESD protection measures.
6. Mounting Orientation: Mount the CY7C1061G-10BVXI according to the recommended orientation to ensure proper electrical connections and heat dissipation.
7. Signal Integrity: Maintain signal integrity by ensuring that all signal traces are properly routed and terminated as per best practices.

For detailed information, refer to the datasheet provided by Cypress Semiconductor.

(For reference only)