Details

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BUY IRFU120NPBF-VB https://www.utsource.net/itm/p/12542364.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DS)			200	V
Gate-Source Voltage	V(GS)	-15		15	V
Continuous Drain Current	I(D)		9.5		A	Tc = 25°C
Pulse Drain Current	I(DM)		45		A	tp = 10 μs, Tj = 25°C
Power Dissipation	P(TOT)			60	W	Tc = 25°C
Junction Temperature	T(j)			175	°C
Storage Temperature	T(stg)	-55		150	°C

Instructions for IRFU120NPBF-VB

1. Handling Precautions:

   • The device is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.

2. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Tighten the mounting screws to the recommended torque to ensure good thermal contact.

3. Biasing:

   • Apply gate voltage within the specified range to avoid damage to the gate oxide.
   • Ensure that the gate-source voltage does not exceed the maximum rating under all operating conditions.

4. Operation:

   • Operate within the continuous drain current limits specified for the given case temperature.
   • For pulse applications, ensure that the pulse duration and frequency do not exceed the safe operating area of the device.

5. Storage:

   • Store in a dry, cool place within the specified storage temperature range.
   • Avoid exposure to corrosive environments.

6. Testing:

   • Perform initial testing at low power levels to verify correct operation before applying full load conditions.

(For reference only)