Details

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BUY MX29F040CQI-70G https://www.utsource.net/itm/p/12542467.html

Parameter	Description	Value	Unit
Device Type	Flash Memory	-	-
Memory Density	Total Memory	512 K x 8 bits	-
Package	Package Type	TSOP (Type I)	-
Pins	Number of Pins	32	-
Operating Voltage (Vcc)	Supply Voltage Range	2.7 to 3.6	V
Standby Current (Typical)	Standby Current at Vcc = 3.0V	1	μA
Active Current (Typical)	Active Current at Vcc = 3.0V, fCLK = 50 MHz	20	mA
Programming Voltage (Vpp)	Programming Voltage	Not Required	-
Programming Time	Typical Programming Time per Byte	3	μs
Erase Time	Typical Block Erase Time	1	s
Chip Erase Time	Typical Chip Erase Time	8	s
Data Retention	Data Retention	10	years
Operating Temperature	Industrial Temperature Range	-40 to +85	°C
Clock Frequency	Maximum Clock Frequency	50	MHz
Access Time	Access Time at fCLK = 50 MHz	70	ns
Endurance	Write/Erase Cycles	100,000	-

Instructions for Use

1. Power Supply:

   • Connect Vcc to a stable power supply within the range of 2.7V to 3.6V.
   • Connect Vss to ground.

2. Clock Input:

   • Apply a clock signal to the CLK pin with a frequency up to 50 MHz.

3. Address Lines:

   • Connect the address lines (A0-A18) to the appropriate address bus to select the memory location.

4. Data Lines:

   • Connect the data lines (D0-D7) to the data bus for read/write operations.

5. Control Signals:

   • /CE (Chip Enable): Active low. When low, the device is selected.
   • /OE (Output Enable): Active low. When low, the output buffer is enabled.
   • /WE (Write Enable): Active low. When low, a write operation is initiated.
   • /WP (Write Protect): Active low. When low, write protection is enabled.

6. Programming:

   • To program a byte, set /CE and /OE low, apply the address and data, then pulse /WE low.
   • Typical programming time is 3 μs.

7. Erasing:

   • Block Erase: To erase a block, set /CE and /OE low, apply the block address, and execute the block erase command.
   • Chip Erase: To erase the entire chip, set /CE and /OE low, and execute the chip erase command.
   • Typical block erase time is 1 second, and chip erase time is 8 seconds.

8. Read Operation:

   • To read data, set /CE and /OE low, apply the address, and the data will appear on the data lines after the access time (70 ns).

9. Write Protection:

   • To enable write protection, set /WP low. This will prevent any write or erase operations.

10. Temperature Considerations:

    • Ensure that the operating temperature remains within the industrial range of -40°C to +85°C to avoid damage or data corruption.

11. Storage:

    • Store the device in a dry, cool place to ensure long-term data retention and reliability.

(For reference only)