Details

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BUY 2SD2118 https://www.utsource.net/itm/p/12542484.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	VCEO	-	-	60	V	IC = 0.5A, TA = 25°C
Emitter-Collector Voltage	VECS	-	-	60	V	IC = 0.5A, TA = 25°C
Collector-Base Voltage	VCBO	-	-	60	V	IC = 0, TA = 25°C
Base-Emitter Voltage	VBE	-	1.8	2.4	V	IC = 0.5A, TA = 25°C
Continuous Collector Current	IC	-	-	0.5	A	TA = 25°C
Maximum Power Dissipation	PT	-	-	625	mW	TA = 25°C
Storage Temperature Range	TSTG	-55	-	150	°C	-
Operating Temperature Range	TA	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid excessive mechanical stress on the leads.
   • Use proper anti-static precautions to prevent damage from electrostatic discharge (ESD).

2. Mounting:

   • Ensure good thermal contact with the heat sink if high power dissipation is expected.
   • Use appropriate mounting hardware to secure the transistor.

3. Biasing:

   • Ensure that the base-emitter voltage (V_BE) does not exceed the maximum rating.
   • The base current (I_B) should be sufficient to drive the transistor into saturation if required.

4. Operation:

   • Do not exceed the maximum collector-emitter voltage (V_CEO), collector-base voltage (V_CBO), or emitter-collector voltage (V_ECS).
   • Keep the operating temperature within the specified range to avoid thermal runaway.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Follow recommended storage conditions to ensure long-term reliability.

6. Testing:

   • Use a multimeter or a transistor tester to verify the functionality of the transistor.
   • Check for continuity and correct polarity before installation.

7. Derating:

   • For continuous operation at temperatures above 25°C, derate the maximum power dissipation linearly to avoid overheating.

(For reference only)