Details

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BUY IRG4PC50KDPBF https://www.utsource.net/itm/p/12542683.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE(max)	-	-	500	V
Gate-Source Voltage	VGS(max)	-20	-	20	V
Continuous Drain Current	ID(max)	-	13	-	A	@ TC = 25°C
Pulse Drain Current	ID(peak)	-	36	-	A	@ TC = 25°C, tp = 10 μs, IGT = 5 A
Power Dissipation	PTOT(max)	-	-	175	W	@ TC = 25°C
Junction Temperature	TJ(op)	-	-	150	°C
Storage Temperature	TSTG	-55	-	150	°C
Thermal Resistance	RθJC	-	0.8	-	°C/W	Junction to Case
Gate Charge	QG	-	62	-	nC
Turn-On Delay Time	td(on)	-	59	-	ns	@ ID = 13 A, VGS = 15 V, RG = 3 Ω
Rise Time	tr	-	52	-	ns	@ ID = 13 A, VGS = 15 V, RG = 3 Ω
Turn-Off Delay Time	td(off)	-	36	-	ns	@ ID = 13 A, VGS = -15 V, RG = 3 Ω
Fall Time	tf	-	30	-	ns	@ ID = 13 A, VGS = -15 V, RG = 3 Ω

Instructions:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage the power dissipation.
   • Handle with care to avoid damage to the pins and the semiconductor die.

2. Biasing and Operation:

   • Apply the gate-source voltage (V_GS) within the specified limits to avoid damage.
   • Ensure the drain current (I_D) does not exceed the maximum continuous or peak ratings.
   • Monitor the junction temperature (T_J) to prevent overheating.

3. Storage:

   • Store in a dry, cool place within the storage temperature range.
   • Avoid exposure to high humidity and extreme temperatures.

4. Testing:

   • Use appropriate test equipment and conditions as specified in the datasheet.
   • Ensure the test circuit is properly designed to avoid overstressing the device.

5. Safety:

   • Follow all safety guidelines for handling high-voltage and high-power components.
   • Use protective gear when necessary.

6. Soldering:

   • Follow recommended soldering profiles to avoid thermal shock.
   • Allow the device to cool down before testing after soldering.

(For reference only)