Details

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BUY 2SJ222 https://www.utsource.net/itm/p/12542692.html

Parameter	Symbol	Value	Unit	Conditions
Collector-Emitter Voltage	V CES	400	V
Emitter-Base Voltage	V EBS	5	V
Collector Current	I C	15	A
Base Current	I B	1.5	A
Power Dissipation	P T	120	W	Ta = 25°C
Junction Temperature	T j	-55 to +150	°C
Storage Temperature	T stg	-55 to +150	°C
Transition Frequency	f T	6	MHz	IC = 1A, VCE = 30V
Saturation Voltage	V CES(sat)	2.0 (max)	V	IC = 10A, IB = 2A

Instructions for Use:

1. Handling Precautions: Avoid exceeding the maximum ratings provided in the table to prevent damage to the device.
2. Mounting: Ensure proper heat dissipation if operating near maximum power dissipation limits. Consider using a heatsink when necessary.
3. Biasing: Carefully set base currents to ensure the transistor operates within safe limits and achieves desired performance characteristics.
4. Temperature Monitoring: Monitor junction temperature especially under high load conditions to avoid overheating.
5. Storage: Store in a dry place away from direct sunlight and extreme temperatures to maintain component integrity.
6. Installation: Follow standard electronic assembly practices to ensure reliable connections and optimal performance.

(For reference only)