Details

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BUY RGTH60TS65 https://www.utsource.net/itm/p/12542706.html

Parameter	Symbol	Value	Unit
Rated Voltage	VRMS	650	V
Peak Repetitive Reverse Voltage	VRRM	910	V
Non-Repetitive Peak Reverse Surge Voltage	VRSM	1200	V
Rated RMS Current	IF	60	A
Peak Surge Current (8.3/20 渭s)	ISM	1200	A
Junction Temperature Range	TJ	-55 to +175	掳C
Storage Temperature Range	TSTG	-55 to +150	掳C
Forward Voltage at Rated Current	VF	1.1	V
Reverse Leakage Current at 25掳C	IR	50	渭A

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to secure the device.

2. Electrical Connections:

   • Connect the anode and cathode terminals correctly to avoid reverse biasing the diode.
   • Ensure all connections are tight and secure to prevent electrical issues.

3. Thermal Management:

   • Monitor the junction temperature to ensure it does not exceed the maximum allowable temperature.
   • Use thermal paste or thermal interface materials between the device and the heatsink for better heat dissipation.

4. Surge Handling:

   • The device is designed to handle surge currents up to 1200 A (8.3/20 渭s). Ensure that any surge conditions do not exceed these limits to avoid damage.

5. Storage:

   • Store the device in a dry, cool environment within the specified storage temperature range to prevent degradation.

6. Handling:

   • Handle the device with care to avoid mechanical damage.
   • Use anti-static precautions to prevent electrostatic discharge (ESD) damage.

7. Testing:

   • Perform regular testing to ensure the device is functioning within its rated parameters.
   • Use appropriate test equipment and methods to avoid damaging the device during testing.

8. Compliance:

   • Ensure that the application complies with all relevant safety and regulatory standards.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)