Details

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BUY SKKH72/22EH4 https://www.utsource.net/itm/p/12542717.html

Parameter	Value
Part Number	SKKH72/22EH4
Type	MOSFET
Package	TO-220
VDS (Max Drain-Source Voltage)	700 V
VGS (Max Gate-Source Voltage)	±20 V
RDS(on) (Drain-Source On-Resistance)	2.2 Ω @ VGS = 10 V, ID = 1 A
ID (Continuous Drain Current)	2.2 A @ Tc = 25°C
PD (Power Dissipation)	65 W @ Tc = 25°C
Operating Temperature Range	-55°C to +150°C
Storage Temperature Range	-55°C to +150°C
Total Gate Charge (Qg)	35 nC @ VDS = 400 V, ID = 1 A
Input Capacitance (Ciss)	1800 pF @ VGS = 0 V, f = 1 MHz
Output Capacitance (Coss)	190 pF @ VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance (Crss)	120 pF @ VDS = 400 V, f = 1 MHz

Instructions for Use:

1. Handling Precautions:

   • Handle with care to avoid static discharge which can damage the device.
   • Use appropriate ESD protection measures when handling the MOSFET.

2. Mounting:

   • Ensure proper heat dissipation by using a heatsink if necessary.
   • Follow the recommended PCB layout guidelines to minimize parasitic inductances and improve thermal performance.

3. Biasing:

   • Apply the gate voltage carefully to avoid exceeding the maximum VGS rating.
   • Use a gate resistor to limit the gate current and prevent oscillations.

4. Operation:

   • Ensure that the drain-source voltage (VDS) does not exceed the maximum rated value.
   • Keep the operating temperature within the specified range to ensure reliable operation.

5. Testing:

   • Use a suitable test setup to verify the parameters such as RDS(on), VDS, and VGS.
   • Perform tests at the specified conditions to ensure accurate results.

6. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • Avoid exposure to corrosive environments.

7. Disposal:

   • Dispose of the device according to local environmental regulations.

(For reference only)