Details

---

BUY STP45N65M5 https://www.utsource.net/itm/p/12542745.html

Below is the parameter table and instructions for the STP45N65M5, a 650V N-Channel Power MOSFET from STMicroelectronics.

STP45N65M5 Parameter Table

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDSS	-	-	650	V	-
Gate-Source Voltage	VGSS	-20	-	20	V	-
Continuous Drain Current	ID	-	-	45	A	TC = 25°C
Pulsed Drain Current	ID(m)	-	-	135	A	tp = 10μs, IG = 1A, TC = 25°C
Power Dissipation	PD	-	-	180	W	TA = 25°C
RDS(on)	RDS(on)	-	0.78	1.1	Ω	VGS = 10V, ID = 45A, TJ = 25°C
Input Capacitance	Ciss	-	1850	-	pF	VDS = 30V, f = 1MHz
Output Capacitance	Coss	-	330	-	pF	VDS = 30V, f = 1MHz
Gate Charge	QG	-	90	-	nC	VDS = 400V, ID = 10A, VGS = 15V
Threshold Voltage	VGS(th)	2.0	3.5	5.0	V	ID = 250μA, TJ = 25°C
Total Junction-to-Case Thermal Resistance	RθJC	-	0.5	-	°C/W	-
Total Junction-to-Ambient Thermal Resistance	RθJA	-	62	-	°C/W	-

Instructions for Use

1. Handling and Storage:

   • ESD Protection: The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and storage.
   • Storage Conditions: Store the device in a dry, cool place with controlled humidity and temperature.

2. Mounting and Assembly:

   • Heat Sinking: For high power applications, ensure adequate heat sinking to maintain the junction temperature within safe limits.
   • Soldering: Follow the recommended soldering profile to avoid thermal damage. Use a maximum soldering temperature of 260°C for no more than 10 seconds.

3. Electrical Connections:

   • Gate Drive: Ensure the gate drive circuit provides sufficient current to charge and discharge the gate capacitance quickly. Use a gate resistor to control the switching speed and reduce ringing.
   • Source Connection: Ensure a low-inductance path between the source terminal and the ground plane to minimize voltage spikes.

4. Operating Conditions:

   • Temperature Range: Operate the device within the specified temperature range: T_J = -55°C to +150°C.
   • Voltage and Current Limits: Do not exceed the maximum ratings for V_DSS, V_GSS, I_D, and P_D.

5. Testing and Troubleshooting:

   • Initial Testing: Before applying full load, perform initial testing at reduced power levels to verify proper operation.
   • Fault Conditions: Monitor the device for signs of overheating, excessive current, or voltage spikes. Use appropriate protective circuits to prevent damage.

6. Design Considerations:

   • Parasitic Inductance: Minimize parasitic inductance in the circuit layout to reduce the risk of voltage overshoot and ringing.
   • Snubber Circuits: Consider using snubber circuits to protect against voltage transients, especially in high-frequency switching applications.

By following these guidelines, you can ensure reliable and efficient operation of the STP45N65M5 in your application.

(For reference only)