Details

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BUY BTS5241L https://www.utsource.net/itm/p/12542762.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Continuous Drain Current	ID	-	60	-	A	Continuous current through the drain, at 25°C ambient temperature
Pulse Drain Current (t=100 μs)	Ipd	-	130	-	A	Peak current through the drain for a pulse width of 100 μs
Continuous Power Dissipation	PD	-	75	-	W	Maximum power dissipation at 25°C ambient temperature
Junction Temperature	TJ	-	-	150	°C	Maximum junction temperature
Storage Temperature Range	Tstg	-40	-	150	°C	Temperature range for storage and operation
Gate-Source Voltage	VGS	-18	-	18	V	Maximum gate-source voltage
Drain-Source Breakdown Voltage	BVdss	-	45	-	V	Drain-source breakdown voltage
On-State Resistance	RDS(on)	-	2.9	-	mΩ	On-state resistance at 25°C and VGS = 10V
Total Gate Charge	Qg	-	49	-	nC	Total gate charge
Input Capacitance	Ciss	-	2900	-	pF	Input capacitance at VDS = 10V, VGS = 0V
Output Capacitance	Coss	-	580	-	pF	Output capacitance at VDS = 10V, VGS = 0V
Reverse Transfer Capacitance	Crss	-	1200	-	pF	Reverse transfer capacitance at VDS = 10V, VGS = 0V

Instructions for Use:

1. Thermal Management:

   • Ensure adequate heat sinking to maintain the junction temperature within the specified limits.
   • Use thermal paste or thermal interface materials to improve heat transfer from the package to the heatsink.

2. Gate Drive:

   • Apply a gate-source voltage (VGS) between -18V and +18V.
   • For optimal performance, use a gate drive voltage of at least 10V to fully turn on the MOSFET and minimize RDS(on).

3. Current Handling:

   • Do not exceed the continuous drain current (ID) of 60A or the pulse drain current (Ipd) of 130A for 100 μs pulses.
   • Ensure that the power dissipation (PD) does not exceed 75W at 25°C ambient temperature.

4. Voltage Ratings:

   • Do not exceed the drain-source breakdown voltage (BVdss) of 45V.
   • Keep the gate-source voltage (VGS) within the specified range to avoid damage to the device.

5. Capacitance Considerations:

   • Account for the input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in your circuit design to ensure stable operation and minimize switching losses.

6. Storage and Operation:

   • Store and operate the device within the specified storage temperature range (-40°C to 150°C).
   • Avoid exposing the device to temperatures above the maximum junction temperature (150°C) during operation.

7. Handling Precautions:

   • Handle the device with care to avoid mechanical damage.
   • Follow proper ESD (Electrostatic Discharge) precautions to prevent damage to the sensitive components.

By following these parameters and instructions, you can ensure reliable and efficient operation of the BTS5241L MOSFET.

(For reference only)