Details

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BUY SGP07N120 https://www.utsource.net/itm/p/12542783.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	BVdss			120	V	Drain-to-source breakdown voltage
Continuous Drain	Id		7		A	Continuous drain current
Pulse Drain	Ipp		35		A	Peak pulse drain current (t=10μs, duty 1%)
Gate Threshold	Vgs(th)	1.0	2.0	3.0	V	Gate threshold voltage
On-State Resistance	Rds(on)	0.18	0.22	0.26	Ω	On-state resistance at Vgs=10V
Total Power Dissipation	Ptot		140		W	Total power dissipation
Junction Temperature	Tj	-55		150	°C	Operating junction temperature

Instructions for SGP07N120:

1. Handling Precautions:

   • The device is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
   • Avoid exceeding the maximum ratings listed in the table to prevent damage.

2. Mounting and Assembly:

   • Ensure proper heat sinking if operating near maximum power dissipation to maintain junction temperature within limits.
   • Follow recommended PCB layout guidelines for optimal thermal performance.

3. Operating Conditions:

   • Ensure that the gate voltage does not exceed the specified gate-source voltage rating.
   • For reliable operation, keep the drain current within the continuous and pulse drain current limits.

4. Storage and Packaging:

   • Store in a dry environment to prevent moisture ingress which can affect performance.
   • Use anti-static packaging materials when storing or transporting the devices.

5. Testing:

   • Before incorporating into circuits, verify parameters such as on-resistance and gate threshold voltage using standard test methods.

6. Applications:

   • Suitable for switching applications in power supplies, motor control, and general-purpose switching circuits where low on-resistance and high efficiency are required.

(For reference only)