Details

---

BUY K6T1008C2E-GB70 https://www.utsource.net/itm/p/12542797.html

Parameter	Description	Value
Device Type	Type of device	1008C2E, 10-bit Serial EEPROM
Package	Package type	8-pin SOIC (Small Outline Integrated Circuit)
Operating Voltage (Vcc)	Supply voltage range	1.7 V to 5.5 V
Operating Temperature Range	Temperature range for operation	-40°C to +85°C
Storage Temperature Range	Temperature range for storage	-65°C to +150°C
Memory Size	Total memory size	1024 bits (128 bytes)
Organization	Memory organization	128 x 8 bits
Page Write Size	Maximum number of bytes that can be written at once	8 bytes
Write Cycle Time	Time required to complete a write cycle	5 ms (max)
Read Cycle Time	Time required to complete a read cycle	0.1 μs (max)
Data Retention	Guaranteed data retention time	100 years
Endurance	Number of write/erase cycles	1,000,000 cycles
Standby Current (Vcc = 5.5V)	Current consumption in standby mode	1 μA (max)
Active Current (Vcc = 5.5V)	Current consumption during active mode	1 mA (max)
Clock Frequency	Maximum clock frequency for SPI communication	10 MHz
Communication Interface	Type of communication interface	SPI (Serial Peripheral Interface)
Pin Configuration	Pin assignments	CS (Chip Select), SCK (Serial Clock), MOSI (Master Out Slave In), MISO (Master In Slave Out), Vcc, GND, NC (Not Connected)

Instructions for Use:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the specified range of 1.7 V to 5.5 V.
   • Connect the Vcc pin to the positive power supply and the GND pin to the ground.

2. Communication:

   • The K6T1008C2E-GB70 uses the SPI (Serial Peripheral Interface) protocol.
   • Connect the CS (Chip Select), SCK (Serial Clock), MOSI (Master Out Slave In), and MISO (Master In Slave Out) pins to the corresponding pins on your microcontroller or master device.

3. Initialization:

   • Before any read or write operations, ensure the CS pin is set low to select the device.
   • After the operation, set the CS pin high to deselect the device.

4. Read Operation:

   • To read data, send the read command followed by the address of the memory location.
   • The device will then output the data on the MISO line.

5. Write Operation:

   • To write data, send the write command followed by the starting address and the data to be written.
   • The device will accept up to 8 bytes of data in a single write cycle.
   • Wait for the write cycle to complete (5 ms maximum) before performing another write operation.

6. Power Management:

   • To minimize power consumption, use the standby mode by setting the CS pin high when the device is not in use.
   • The device consumes a maximum of 1 μA in standby mode.

7. Temperature Considerations:

   • Ensure the operating temperature is within the specified range of -40°C to +85°C.
   • For long-term storage, keep the device within the storage temperature range of -65°C to +150°C.

8. Endurance and Data Retention:

   • The device is rated for 1,000,000 write/erase cycles.
   • Data retention is guaranteed for 100 years under normal operating conditions.

9. Handling Precautions:

   • Handle the device with care to avoid damage from electrostatic discharge (ESD).
   • Follow proper soldering techniques to ensure reliable connections.

For detailed timing diagrams and additional information, refer to the datasheet provided by the manufacturer.

(For reference only)