Details

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BUY RURG50100 https://www.utsource.net/itm/p/12543046.html

Parameter	Description	Value
Part Number	RURG50100	-
Type	Power MOSFET	-
Package	TO-247-3L	-
Polarity	N-Channel	-
VDSS	Drain-to-Source Voltage	50 V
RDS(on)	On-State Resistance at 25°C, 10 V	10 mΩ
ID	Continuous Drain Current	100 A
PTOT	Total Power Dissipation (Ta = 25°C)	250 W
QG	Gate Charge	150 nC
QGD	Gate-to-Drain Charge	40 nC
fT	Transition Frequency	3 MHz
VGS(th)	Gate Threshold Voltage	2.5 V to 4.5 V
TJ	Junction Temperature Range	-55°C to +175°C
Storage Temperature	Operating Temperature Range	-55°C to +150°C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Use thermal paste or a thermal pad between the MOSFET and the heatsink for optimal thermal performance.

2. Biasing:

   • Apply a gate voltage (V_GS) of at least 10 V to ensure the MOSFET is fully on and has the lowest possible R_DS(on).
   • Avoid applying a gate voltage greater than the maximum V_GS rating to prevent damage.

3. Handling:

   • Handle with care to avoid static discharge which can damage the MOSFET.
   • Use appropriate ESD protection measures when handling the device.

4. Operation:

   • Do not exceed the maximum drain current (I_D) or the total power dissipation (P_TOT).
   • Monitor the junction temperature to ensure it does not exceed the maximum operating temperature.

5. Testing:

   • Use a suitable multimeter or oscilloscope to verify the correct operation of the MOSFET.
   • Test the device in a controlled environment to avoid overloading or damaging the component.

6. Storage:

   • Store the MOSFET in a dry, cool place away from direct sunlight.
   • Keep the device in its original packaging until ready for use to protect against static damage.

(For reference only)