Details

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BUY 2SC1740 https://www.utsource.net/itm/p/12543062.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	IC = 150 mA, IB = 0	-	-	60	V
Collector-Base Voltage	VCBO	IC = 0, IB = 0	-	-	80	V
Emitter-Base Voltage	VEBO	IE = 5 mA	-	-	6	V
Collector Current	IC	VCE = 30 V	-	150	-	mA
Base Current	IB	VBE = 0.7 V	-	5	-	mA
DC Current Gain	hFE	IC = 150 mA, VCE = 10 V	100	400	-	-
Transition Frequency	fT	IC = 150 mA, VCE = 10 V	-	200	-	MHz
Power Dissipation	PT	TA = 25°C	-	-	625	mW
Operating Temperature	TOP	-	-55	-	150	°C

Instructions for Use:

1. Mounting: Ensure that the transistor is mounted on a suitable heat sink if operating at high power levels to prevent overheating.
2. Biasing: Proper biasing is essential to ensure stable operation. Use a voltage divider or other biasing techniques to set the base current.
3. Protection: Consider using series resistors to limit the base current and protect the transistor from overcurrent conditions.
4. Storage: Store the transistor in a dry, cool place away from direct sunlight and sources of heat.
5. Handling: Handle the transistor with care to avoid damage to the leads and the semiconductor junctions. Use anti-static precautions to prevent electrostatic discharge (ESD) damage.
6. Testing: When testing the transistor, use a multimeter to check the continuity and resistance between the leads. Ensure that the test settings do not exceed the maximum ratings of the transistor.
7. Circuit Design: Refer to the typical application circuits provided by the manufacturer for guidance on integrating the 2SC1740 into your design.

(For reference only)