Details

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BUY 2SC2655L https://www.utsource.net/itm/p/12543077.html

Parameter	Symbol	Min	Typical	Max	Unit
Collector-Emitter Voltage	VCE	-	-	40	V
Emitter-Base Voltage	VEB	-1.5	-	5	V
Collector Current	IC	-	150	-	mA
Base Current	IB	-	15	-	mA
Power Dissipation	PT	-	-	350	mW
Storage Temperature	TSTG	-55	-	150	°C
Operating Temperature	TA	-55	-	150	°C
Transition Frequency	fT	-	300	-	MHz
DC Current Gain	hFE	100	300	700	-

Instructions for Use:

1. Mounting and Handling:

   • Handle the 2SC2655L with care to avoid damage to the leads and the semiconductor junction.
   • Ensure that the mounting surface is clean and free from contaminants.

2. Electrical Connections:

   • Connect the collector (C), base (B), and emitter (E) terminals correctly.
   • Ensure that the maximum ratings for voltage and current are not exceeded to prevent damage to the device.

3. Thermal Management:

   • The device can dissipate up to 350 mW of power. Use appropriate heat sinking if operating near the maximum power dissipation.
   • Ensure adequate ventilation or cooling to maintain the operating temperature within the specified range.

4. Storage and Operation:

   • Store the device in a dry, cool place away from direct sunlight.
   • Operate the device within the specified temperature range to ensure reliable performance.

5. Testing:

   • Use a multimeter or a transistor tester to verify the functionality of the 2SC2655L.
   • Check the continuity and resistance between the terminals to ensure proper connections.

6. Soldering:

   • Use a low-wattage soldering iron to avoid overheating the device.
   • Solder quickly to minimize thermal stress on the semiconductor junction.

7. Application:

   • The 2SC2655L is suitable for high-frequency applications due to its transition frequency of 300 MHz.
   • It can be used in amplifiers, oscillators, and switching circuits where high gain and fast switching are required.

(For reference only)