Details

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BUY VND5050K-E https://www.utsource.net/itm/p/12543089.html

Parameter	Value	Unit
Type	N-Channel MOSFET	-
Package	TO-220	-
Maximum Drain Current	50	A
Maximum Drain-Source Voltage	500	V
Maximum Gate-Source Voltage	±20	V
Maximum Power Dissipation	140	W
RDS(on) @ VGS=10V	0.018	Ω
Junction Temperature	-55 to +150	°C
Storage Temperature	-55 to +150	°C

Instructions for Use:

1. Handling Precautions:

   • The VND5050K-E is sensitive to electrostatic discharge (ESD). Handle with care and use appropriate ESD protection.

2. Mounting:

   • Ensure the MOSFET is securely mounted on a heatsink if operating near maximum current or power dissipation limits to prevent overheating.

3. Biasing:

   • Apply gate voltage within the specified range to avoid damaging the device. A gate-source voltage exceeding ±20V can cause permanent damage.

4. Thermal Management:

   • Monitor the junction temperature to ensure it remains within operational limits (-55°C to +150°C). Proper thermal management is crucial for reliable operation.

5. Storage:

   • Store in a dry, cool place within the specified storage temperature range to maintain device integrity.

6. Testing:

   • When testing the device, ensure that all voltages and currents are within the specified maximum ratings to avoid premature failure.

(For reference only)