Details

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BUY IRFB5615PBF IRFB5615 TO-220 https://www.utsource.net/itm/p/12543103.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-	-	55	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	19.3	-	A	@ TC = 25°C
Continuous Drain Current	ID	-	14.7	-	A	@ TC = 100°C
Pulse Drain Current	ID(pulse)	-	48.2	-	A	@ TC = 25°C, tp = 10μs, Duty Cycle = 1%
Total Power Dissipation	PTOT	-	-	150	W	@ TA = 25°C
Junction Temperature	TJ	-	-	175	°C
Storage Temperature Range	TSTG	-65	-	150	°C
Thermal Resistance, Junction to Case	RθJC	-	0.55	-	°C/W
Input Capacitance	Ciss	-	1900	-	pF	@ VDS = 10V, f = 1MHz
Output Capacitance	Coss	-	560	-	pF	@ VDS = 10V, f = 1MHz
Gate Charge	QG	-	120	-	nC	@ VDS = 10V, ID = 10A
Threshold Voltage	VGS(th)	2.0	2.5	3.0	V	@ ID = 250μA
On-State Resistance	RDS(on)	-	0.0058	-	Ω	@ VGS = 10V, ID = 19.3A

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads and the die.
   • Use appropriate ESD (Electrostatic Discharge) protection measures when handling the device.

2. Mounting:

   • Ensure that the mounting surface is clean and flat to maximize thermal performance.
   • Use a suitable heat sink or cooling solution to manage the junction temperature, especially under high current conditions.

3. Soldering:

   • Use a soldering iron with a temperature not exceeding 300°C.
   • Soldering time should be kept to a minimum to avoid thermal damage to the device.

4. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits to avoid damaging the gate oxide.
   • Ensure that the gate-source voltage is sufficient to fully turn on the MOSFET and minimize on-state resistance.

5. Operation:

   • Monitor the drain current (I_D) and power dissipation (P_TOT) to ensure they do not exceed the maximum ratings.
   • Keep the junction temperature (T_J) below the maximum rating to prevent thermal runaway.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Follow the storage temperature range (T_STG) to ensure long-term reliability.

7. Testing:

   • Use a multimeter or an oscilloscope to verify the electrical parameters such as V_GS, V_DS, and I_D.
   • Perform functional tests to ensure the device operates correctly under the intended operating conditions.

By following these guidelines, you can ensure optimal performance and longevity of the IRFB5615PBF IRFB5615 TO-220 MOSFET.

(For reference only)