IKW40N65H5FKSA1

IKW40N65H5FKSA1

Category: Transistors

Specifications
Details

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Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage V CES 650 V
Gate-Emitter Voltage V GES -20 20 V
Continuous Collector Current I C 40 A Tc = 25°C
Pulse Collector Current I CM 160 A tp = 10ms, I FT = 2 x I C
Power Dissipation P T 380 W Tc = 25°C
Junction Temperature T J 175 °C
Storage Temperature T STG -55 150 °C
Thermal Resistance, Junction to Case R θJC 0.45 0.45 K/W

Instructions for Use:

  1. Installation:

    • Ensure that the device is installed in a well-ventilated area to prevent overheating.
    • Use appropriate heat sinks or cooling methods if operating near maximum power dissipation.
  2. Handling Precautions:

    • Handle with care to avoid damage to the leads and body of the device.
    • Avoid exposure to excessive mechanical stress during soldering or mounting.
  3. Electrical Connections:

    • Connect the gate terminal carefully to prevent short circuits.
    • Ensure all connections are secure and insulated as necessary.
  4. Operating Conditions:

    • Do not exceed the maximum ratings specified in the parameter table.
    • Monitor the junction temperature to ensure it remains within safe limits.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in original packaging until ready for use to protect against static damage.
  6. Testing:

    • Before installation, verify the functionality using a compatible tester.
    • Follow manufacturer guidelines for testing procedures to avoid damaging the device.

For detailed application notes and more specific instructions, refer to the datasheet provided by the manufacturer.

(For reference only)

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