Details

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BUY PSMN4R3-100PS https://www.utsource.net/itm/p/12543475.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Continuous Drain Current	ID	-	43	-	A	Tc = 25°C, VGS = 10V
Pulse Drain Current	ICM	-	100	-	A	t = 10 ms, Duty 1%
Drain-Source Breakdown Voltage	BVDSS	90	-	100	V	-
Gate-Source Voltage	VGS	-20	-	12	V	-
Gate-Threshold Voltage	VGS(th)	1.8	-	3.0	V	ID = 1 mA, Tj = 25°C
On-State Resistance	RDS(on)	-	4.3	-	mΩ	VGS = 10V, Tj = 25°C
Total Power Dissipation	PD	-	-	200	W	Tc = 25°C
Junction Temperature	Tj	-	-	175	°C	-
Storage Temperature Range	Tstg	-55	-	150	°C	-

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage to the device.
   • Use appropriate mounting techniques to ensure good thermal contact with the heat sink.

2. Electrical Connections:

   • Connect the drain (D) to the load or power supply.
   • Connect the source (S) to the ground or return path.
   • Apply the gate (G) voltage carefully to control the device.

3. Thermal Management:

   • Ensure adequate heat dissipation by using a suitable heat sink.
   • Monitor the junction temperature to prevent overheating.

4. Operating Conditions:

   • Do not exceed the maximum ratings specified in the table.
   • Operate within the recommended conditions to ensure reliable performance.

5. Gate Drive:

   • Use a gate resistor to limit the current and reduce ringing.
   • Ensure the gate voltage is within the specified range to avoid damage.

6. Storage and Transportation:

   • Store in a dry, cool place to prevent moisture damage.
   • Handle with care during transportation to avoid physical damage.

7. Testing:

   • Perform initial testing under controlled conditions to verify proper operation.
   • Use appropriate test equipment to measure parameters accurately.

8. Safety Precautions:

   • Follow all safety guidelines when working with high voltages and currents.
   • Use protective equipment as necessary to prevent injury.

(For reference only)