Details

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BUY STP23NM60ND https://www.utsource.net/itm/p/12543767.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	V(DSS)			600	V
Gate-Source Voltage	V(GS)	-15		20	V
Continuous Drain Current	I(D)		23		A	Tc = 25°C
Pulse Drain Current	I(D pul)		46		A	t(p) = 10 μs, I(Tss) = 2.3 A
Total Gate Charge	Q(G)		70		nC	V(GS) = 15 V
Input Capacitance	Ciss		2800		pF	V(DS) = 30 V
Output Capacitance	Coss		790		pF	V(DS) = 30 V
Reverse Transfer Capacitance	Crss		570		pF	V(DS) = 30 V
RDS(on)	RDS(on)	0.16		0.22	Ω	V(GS) = 10 V, I(D) = 4.6 A
Threshold Voltage	V(GST)	2	4	6	V	I(D) = 1 mA

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper handling to avoid damage from electrostatic discharge (ESD).
   • Mount the device in a way that ensures adequate heat dissipation.

2. Operating Conditions:

   • Do not exceed the maximum ratings provided.
   • Operate within specified temperature ranges to ensure reliability.

3. Gate Drive:

   • Apply gate voltage within the specified range to prevent gate oxide damage.
   • Use appropriate gate resistance to control switching speed and minimize oscillation.

4. Thermal Considerations:

   • Monitor junction temperature to stay within safe operating limits.
   • Use heatsinks or other cooling methods if necessary to maintain acceptable temperatures.

5. Switching Applications:

   • For high-frequency switching applications, minimize parasitic inductances in the circuit layout.
   • Ensure the power supply can handle peak currents during switching transitions.

6. Storage and Packaging:

   • Store in recommended conditions to avoid moisture and contamination.
   • Follow manufacturer guidelines for packaging and transportation to prevent physical damage.

For detailed application notes and further information, refer to the datasheet provided by STMicroelectronics.

(For reference only)