Details

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BUY MJE5742G https://www.utsource.net/itm/p/12553473.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	IC = 0.5mA	-	-	120	V
Emitter-Base Voltage	V(BR)EBO	IE = 5mA	-	-	7	V
Collector-Base Voltage	V(BR)CBO	IC = 5mA	-	-	120	V
Collector Current	IC	VCE = 4V, IB = 50mA	-	3	5	A
Base Current	IB	VCE = 4V, IC = 3A	-	50	80	mA
DC Current Gain	hFE	IC = 500mA, VCE = 4V	20	100	400	-
Transition Frequency	fT	IC = 150mA, VCE = 4V	-	15	-	MHz
Storage Temperature	Tstg	-	-65	-	150	°C

Instructions for MJE5742G

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the storage temperature range.
   • Handle with care to prevent damage from electrostatic discharge (ESD).

2. Mounting and Soldering:

   • Ensure that the soldering temperature does not exceed 260°C and that the soldering duration is within 10 seconds.
   • Allow sufficient cooling time after soldering.

3. Biasing and Operation:

   • Ensure that the operating voltages do not exceed the maximum ratings provided in the table.
   • For optimal performance, operate within the recommended biasing conditions.

4. Testing and Verification:

   • Verify the device parameters using the specified test conditions before incorporating it into a circuit.
   • Conduct thorough testing under actual operating conditions to ensure reliability.

5. Storage and Packaging:

   • Store in a dry, cool place away from direct sunlight.
   • Follow anti-static packaging guidelines when storing or transporting the devices.

(For reference only)