Details

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BUY VND830P https://www.utsource.net/itm/p/12553485.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Supply Voltage	VCC	4.5	-	20	V	Operating supply voltage range
Continuous Drain Current	ID	-	-	1.5	A	Maximum continuous drain current
Peak Pulse Current	ID(pk)	-	-	3.0	A	Maximum peak pulse current (tp = 10 ms, duty cycle < 1%)
Gate Threshold Voltage	VGS(th)	1.0	1.6	2.2	V	Gate threshold voltage
On-State Resistance	RDS(on)	-	0.045	0.075	Ω	On-state resistance at VGS = 4.5V, ID = 1.5A
Gate Charge	QG	-	12	18	nC	Total gate charge
Switching Time	ton	-	100	200	ns	Turn-on time
Switching Time	toff	-	100	200	ns	Turn-off time
Junction Temperature	TJ	-	-	150	°C	Maximum junction temperature
Storage Temperature	TSTG	-40	-	150	°C	Operating storage temperature range

Instructions for Use

1. Supply Voltage (V_CC):

   • Ensure the supply voltage is within the specified range of 4.5V to 20V to avoid damage to the device.

2. Continuous Drain Current (I_D):

   • Do not exceed the maximum continuous drain current of 1.5A to prevent overheating and potential failure.

3. Peak Pulse Current (I_D(pk)):

   • The device can handle peak pulse currents up to 3.0A, but ensure that these pulses are short (t_p = 10 ms) and have a low duty cycle (< 1%).

4. Gate Threshold Voltage (V_GS(th)):

   • The device will start to conduct when the gate-to-source voltage exceeds 1.0V. For reliable operation, use a gate voltage above 1.6V.

5. On-State Resistance (R_DS(on)):

   • The on-state resistance is typically 0.045Ω at V_GS = 4.5V and I_D = 1.5A. Ensure this value is considered in power dissipation calculations.

6. Gate Charge (Q_G):

   • The total gate charge is important for switching applications. Use this value to determine the required gate drive circuitry.

7. Switching Times (t_on, t_off):

   • The turn-on and turn-off times are approximately 100 to 200 ns. These values are crucial for high-frequency switching applications.

8. Junction Temperature (T_J):

   • Keep the junction temperature below 150°C to ensure reliable operation. Use appropriate heat sinks or cooling methods if necessary.

9. Storage Temperature (T_STG):

   • Store the device in an environment with temperatures ranging from -40°C to 150°C to maintain its performance and longevity.

10. Handling Precautions:

    • Handle the device with care to avoid static discharge, which can damage the sensitive components.
    • Follow proper soldering techniques to prevent thermal shock and mechanical stress.

By adhering to these parameters and instructions, you can ensure optimal performance and reliability of the VND830P MOSFET.

(For reference only)