Details

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BUY 2N1671B https://www.utsource.net/itm/p/12553573.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	70	V
Collector-Base Voltage	VCBO	-	-	75	V
Emitter-Base Voltage	VEBO	-1.5	-	-5	V
Collector Current	IC	-	-	2	A
Base Current	IB	-	-	0.2	A
Power Dissipation	PD	-	-	35	W
Junction Temperature	TJ	-55	-	150	°C
Storage Temperature	TSTG	-65	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • Avoid exceeding the maximum ratings listed in the table to prevent damage to the device.
   • Use appropriate heat sinks if operating near maximum power dissipation.

2. Mounting:

   • Ensure proper mounting to maintain thermal performance, especially important when approaching the maximum junction temperature.

3. Biasing:

   • For optimal performance, bias the base current (IB) according to the application requirements and within the specified limits.

4. Testing:

   • When testing or measuring parameters, ensure environmental conditions (like ambient temperature) are controlled to match the intended operational environment.

5. Storage:

   • Store in a dry, cool place within the storage temperature range to avoid degradation of properties.

6. Soldering:

   • If soldering is required, do not exceed temperatures that could cause the junction temperature to rise above its maximum limit.

(For reference only)