Details

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BUY W25Q128FVSSIG https://www.utsource.net/itm/p/12553574.html

Parameter	Symbol	Min	Typical	Max	Unit	Description
Supply Voltage	Vcc	2.7	-	3.6	V	Operating voltage range
Standby Current	Icc	-	1.0	5.0	μA	Current consumption in standby mode
Active Current	Icc	-	10	30	mA	Current consumption during active operation
Programming Current	Iprog	-	1.0	2.0	mA	Current required for programming
Erase Time (Sector)	Ters	-	200	400	ms	Time to erase one sector (4KB)
Page Program Time	Tpp	-	1.5	3.0	ms	Time to program one page (256 bytes)
Chip Erase Time	Tce	-	20	40	s	Time to erase the entire chip
Data Retention	-	-	100	-	years	Guaranteed data retention period
Write Cycles (Endurance)	-	-	100,000	-	cycles	Number of write/erase cycles per sector
Operating Temperature	Toper	-40	-	85	°C	Operating temperature range
Storage Temperature	Tstg	-40	-	125	°C	Storage temperature range
Package Type	-	-	-	-	WSON8	Package type

Instructions for Using W25Q128FVSSIG

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • Connect the Vcc pin to the positive power supply and GND to the ground.

2. Initialization:

   • After applying power, wait for at least 100 μs before sending any commands to the device.
   • Use the Read Status Register command (0x05) to check the status of the device.

3. Read Operations:

   • Use the Read Data command (0x03) to read data from the memory.
   • Send the command followed by the address of the starting location and the number of bytes to read.

4. Write Operations:

   • Before writing, ensure the Write Enable Latch (WEL) bit is set using the Write Enable command (0x06).
   • Use the Page Program command (0x02) to write data to the memory.
   • The data must be written in multiples of the page size (256 bytes).

5. Erase Operations:

   • To erase a sector, use the Sector Erase command (0x20) followed by the address of the sector to be erased.
   • To erase the entire chip, use the Chip Erase command (0xC7).

6. Status Checking:

   • After any write or erase operation, use the Read Status Register command (0x05) to check the status of the operation.
   • The Write In Progress (WIP) bit will be high while the operation is in progress and low when it is complete.

7. Protecting Memory:

   • Use the Write Protect (WP) pin to protect the memory from accidental writes.
   • Set the WP pin to high to enable write protection.

8. Handling Power Cycles:

   • Ensure that the device is not powered down during write or erase operations to avoid data corruption.
   • If a power cycle occurs, check the status register to determine if the operation was completed successfully.

9. Temperature Considerations:

   • Operate the device within the specified temperature range (-40°C to 85°C) to ensure reliable performance.
   • Store the device in a temperature range of -40°C to 125°C.

10. Endurance and Data Retention:

    • The device supports up to 100,000 write/erase cycles per sector.
    • Data retention is guaranteed for 100 years under normal operating conditions.

By following these instructions, you can ensure reliable and efficient operation of the W25Q128FVSSIG flash memory.

(For reference only)