Details

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BUY IREBM98-0291A https://www.utsource.net/itm/p/12553579.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Breakdown Voltage	V(BR)DSS			900		V
Continuous Drain Current	ID	Tc = 25°C		48		A
Pulse Drain Current	Ibm	Pulse Width ≤ 300μs, Duty Cycle ≤ 1%		160		A
Gate Threshold Voltage	VGS(th)	ID = 250μA	2.0	4.0	6.0	V
Input Capacitance	Ciss	VDS = 30V, f = 1MHz	1750			pF
Total Power Dissipation	PD	Tc = 25°C		360		W
Junction Temperature	TJ		-55		175	°C
Storage Temperature	Tstg		-55		150	°C

Instructions for Use:

1. Handling Precautions:

   • The IREBM98-0291A is sensitive to ESD (Electrostatic Discharge). Use appropriate ESD protection during handling and installation.

2. Mounting:

   • Ensure proper heat sinking to manage the junction temperature within specified limits. Use thermal grease or a thermal pad between the device and the heatsink for optimal heat transfer.

3. Operating Conditions:

   • Do not exceed the maximum ratings listed in the table under any circumstances to avoid damaging the device.
   • Ensure that the gate-source voltage (VGS) does not exceed the absolute maximum rating to prevent gate oxide damage.

4. Pulse Operation:

   • For pulse operation, ensure that the duty cycle and pulse width are within the specified limits to avoid overheating.

5. Storage:

   • Store the device in a dry environment within the specified storage temperature range to prevent moisture damage.

6. Testing:

   • When testing the device, use caution with test equipment to prevent accidental over-voltage or over-current conditions that can damage the MOSFET.

(For reference only)